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1

Use of a double diffused guard ring to obtain near ideal I–V characteristics in Schottky barrier diodes

J.L. Saltich, L.E. Clark

Journal:

Solid-State Electronics

Year:

1970

Language:

english

File:

PDF, 1.01 MB

english, 1970

2

Moat-etched Schottky barrier diode displaying near ideal I–V characteristics

C. Rhee, J. Saltich, R. Zwernemann

Journal:

Solid-State Electronics

Year:

1972

Language:

english

File:

PDF, 413 KB

english, 1972

3

Processing technology and AC/DC characteristics of linear compatible I/sup 2/L

Saltich, J.L., George, W.L., Soderberg, J.G.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1976

Language:

english

File:

PDF, 668 KB

english, 1976

4

Ion-implanted super-grain transistors

Gegg, W.M., Saltich, J.L., Roop, R.M., George, W.L.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1976

Language:

english

File:

PDF, 1.30 MB

english, 1976

5

Schottky barrier heights of nickel-platinum silicide contacts on n-type Si

Terry, L. E., Saltich, Jack

Journal:

Applied Physics Letters

Year:

1976

Language:

english

File:

PDF, 507 KB

english, 1976

6

[IRE 1978 International Electron Devices Meeting - ()] 1978 International Electron Devices Meeting - "The use, characterization, and reliability implications of vacuum deposited silicon nitride as a capacitor dielectric in integrated circuits"

Roop, R.M., Saltich, J.L.

Year:

1978

Language:

english

File:

PDF, 206 KB

english, 1978

7

Integral heat-sink IMPATT diodes fabricated using p+etch stop

Rhee, C.J., Saltich, J.

Journal:

Proceedings of the IEEE

Year:

1973

Language:

english

File:

PDF, 260 KB

english, 1973

8

[IRE 1972 International Electron Devices Meeting - ()] 1972 International Electron Devices Meeting - The effect of mixed arsenic-phosphorous emitters on device properties

Hunt, R.E., Saltich, J.L., Lillard, R.D., Volk, C.E.

Year:

1972

Language:

english

File:

PDF, 169 KB

english, 1972

9

Use of specific emitter efficiency in evaluation and design of bipolar transistors

Saltich, J.L., Volk, C.E., Clark, L.E.

Journal:

Proceedings of the IEEE

Year:

1973

Language:

english

File:

PDF, 192 KB

english, 1973

10

Effects of pre- and post-annealing treatments on silicon Schottky barrier diodes

Saltich, J.L., Terry, L.E.

Journal:

Proceedings of the IEEE

Year:

1970

Language:

english

File:

PDF, 262 KB

english, 1970

11

Absorption effect of alloyed contacts on GaAs light-emitting diodes

Saltich, J.L., Gurtler, R.W.

Journal:

Proceedings of the IEEE

Year:

1969

Language:

english

File:

PDF, 194 KB

english, 1969

12

Optimized profiles for neutron and photocurrent hardened power transistors

Clark, L. E., Saltich, J. L.

Journal:

IEEE Transactions on Nuclear Science

Year:

1974

Language:

english

File:

PDF, 828 KB

english, 1974

13

[IRE 1971 International Electron Devices Meeting - ()] 1971 International Electron Devices Meeting - High-current, high-voltage, moat-etched Schottky diode

Rhee, C., Saltich, J., Zwernemann, R.

Year:

1971

Language:

english

File:

PDF, 79 KB

english, 1971

14

Current Gain Mechanism in Arsenic Emitter Transistors

Lillard, R. D., Saltich, J. L., Volk, C. E.

Journal:

Journal of The Electrochemical Society

Year:

1973

Language:

english

File:

PDF, 331 KB

english, 1973

15

[IEEE 1973 IEEE Power Electronics Specialists conference - Pasadena, California, USA (1973.6.11-1973.6.13)] 1973 IEEE Power Electronics Specialists Conference - Optimum vertical design and evaluation techniques for high-current, high-voltage transistors

Saltich, J .L., Volk, C.E., Clark, L.E.

Year:

1973

Language:

english

File:

PDF, 922 KB

english, 1973

16

ChemInform Abstract: CURRENT GAIN MECHANISM IN ARSENIC EMITTER TRANSISTORS

LILLARD, R. D., SALTICH, J. L., VOLK, C. E.

Journal:

Chemischer Informationsdienst

Year:

1973

File:

PDF, 95 KB

1973

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